2007. 1. 10 1/1 semiconductor technical data pg05dbvsc tvs diode for esd protection in portable electronics revision no : 3 protection in portable electronics applications. features 50 watts peak pulse power (tp=8/20 s) transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) iec 61000-4-4(eft) 40a(tp=5/50ns) iec 61000-4-5(lightning) 5a(tp=8/20 s) bidirectional type pin configuration structure. small package for use in portable electronics. suitable replacement for multi-layer varistors in esd protection applications. protects one i/o or power line. low clamping voltage. low leakage current. applications cell phone handsets and accessories. microprocessor based equipment. personal digital assistants (pda s) notebooks, desktops, & servers. portable instrumentation. pagers peripherals. maximum rating (ta=25 ) vsc dim millimeters a b c d e cathode mark c d b a e f f 2 1 1. anode 2. anode 1.4 0.05 + _ 0.6 0.05 + _ 0.28 0.03 + _ 1.0 0.05 + _ 0.5 0.05 + _ 0.12 0.03 + _ electrical characteristics (ta=25 ) characteristic symbol rating unit peak pulse power (tp=8/20 s) p pk 50 w junction temperature t j -55 150 storage temperature t stg -55 150 characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 5 v reverse breakdown voltage v br i t =1ma 5.8 - 7.8 v reverse leakage current i r v rwm =5v - - 5 a junction capacitance c j v r =0v, f=1mhz - 15 25 pf marking 5b 21 21
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